HL 33: III-V Halbleiter I
Mittwoch, 10. März 2004, 18:15–19:30, H14
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18:15 |
HL 33.1 |
GaMnAs grown by MOVPE under RAS control — •Alexander Philippou, Stefan Weeke, Markus Pristovsek, and Wolfgang Richter
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18:30 |
HL 33.2 |
Electronic properties of Carbon and Zinc acceptors in GaAs studied with Low Temperature Scanning Tunneling Microscopy — •S. Loth, M. Wenderoth, T.C.G. Reusch, L. Winking, R.G. Ulbrich, S. Malzer, and G. Döhler
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18:45 |
HL 33.3 |
Annealing of InN layers in a MOVPE reactor investigated by in-situ Spectroscopic Ellipsometry. — •Christoph Werner, Massimo Drago, Torsten Schmidtling, Udo W. Pohl, and Wolfgang Richter
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19:00 |
HL 33.4 |
MOVPE in-situ monitoring and analysis of substrate deoxidation of GaSb(100) — •Kristof Möller, Lars Töben, Zadig Kollonitsch, Christoph Giesen, Michael Heuken, Frank Willig, and Thomas Hannappel
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19:15 |
HL 33.5 |
Exzitonenlokalisation in InGaN-Schichten — •T. Finger, J. Christen, Th. Hempel, A. Dadgar und A. Krost
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