Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 4: Ultrakurzzeitph
änomene
HL 4.1: Vortrag
Montag, 8. März 2004, 10:15–10:30, H13
Microscopic theory of carrier-wave Rabi flopping in semiconductors — •T. Tritschler2, Q. T. Vu1, L. Bányai1, H. Haug1, O. D. Mücke2, M. Wegener2, U. Morgner3, and F. X. Kärtner4 — 1Institut für Theoretische Physik, Universität Frankfurt, 60054 Frankfurt am Main, Germany — 2Institut für Angewandte Physik, Wolfgang-Gaede-Straße 1, Universität Karlsruhe (TH), 76131 Karlsruhe, Germany — 3Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117 Heidelberg, Germany — 4Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, MIT, Cambridge, MA 02139, U.S.A.
Carrier-wave Rabi flopping refers to a Rabi oscillation, the frequency of which becomes comparable to the carrier frequency of light. Recently, we have performed corresponding experiments on 50-100 nm thin GaAs films excited with intense 5 fs pulses. However, the semiconductor problem has only been discussed in terms of two-level systems [1]. Consequently, scepticism has been expressed that this simple although intuitive description is able to properly catch the underlying physics. Here, we will show that the experimental spectra are nicely reproduced by a microscopic theory based on the semiconductor Bloch equations, treating the GaAs band structure via a tight-binding approach and accounting for the wave-vector and carrier-density dependent relaxation and dephasing processes in a realistic manner. This shows that our intuitive interpretation in terms of carrier-wave Rabi flopping is correct indeed.
[1] O. D. Mücke et al., Phys. Rev. Lett. 89, 127401 (2002)