Regensburg 2004 – wissenschaftliches Programm
HL 44.42: Poster
Donnerstag, 11. März 2004, 16:30–19:00, Poster A
INVESTIGATIONS OF 3C-SiC GROWTH ON Si (001) — •Mohamed Torche1, Klaus Mueller1, Karsten Henkel1, Grzegorz Lupina1, Andrey Goryako1, Jürgen Wollweber2, and Dieter Schmeisser1 — 1BTU Cottbus, Angewandte Physik-Sensorik, 03013 Cottbus, P.O.Box 101344, Germany — 2Institut für Kristallzüchtung, Adlershof, Berlin
Carbide was grown on Si (001) - substrates with supply of C2H2. Investigation of the interface Si/SiC (buffer layer) is essential for optimized preparation conditions, leading to a high quality of the growing SiC crystal. In addition to the lattice mismatch of 20 per cent between Si and SiC, which causes defects like dislocations or stacking faults, the chemical homogeneity of this layer is important. XPS was used to characterize the first state of SiC crystal growth on the Si substrate. Carbonizing with C2H2 leads to surface reactions which build up the buffer layer. By using electron spectroscopy, it was possible to characterize the SiC/Si (001) buffer layer, depending on the following reaction parameters: Tsubstrate , PC2H2 , PH2 , the ratio of pressures and the reaction time. The measurements were performed in terms of the content of carbide, oxide and roughness/etching-efficiency (Profilometer) for the reaction parameters above. We found, that the most critical parameter is the temperature of the substrate (Tsubstrate).