Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 44: Poster II
HL 44.64: Poster
Donnerstag, 11. März 2004, 16:30–19:00, Poster A
UHV-wafer bonding of heterostructure semiconductor materials using low energy hydrogen ion beam surface cleaning — •Nasser Razek1, Axel Schindler1, Volker Gottschalch2, Gerald Wagner3, and Bernd Rauschenbach1 — 1Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstrasse 15, D-04318 Leipzig, Germany — 2Universität Leipzig, Institut für Anorganische Chemie, Linnestr. 3, 04103 Leipzig — 3Institut für Nichtklassische Chemie e. V., Permoserstr. 15, 04318 Leipzig, Germany
A room temperature wafer bonding process without applying external pressure based on low energy hydrogen ion beam (300 eV) surface cleaning has been studied for GaAs and other III-V-semiconductors. Successful bonding has also been performed between III-V-wafers and Si or Ge, respectively. X-ray photoelectron spectroscopy, atomic force microscopy, ultrasonic microscopy, HR-TEM cross section, photoluminescence and electrical characterization and post-processing steps were performed to evaluate the ion beam treated surfaces and the formed bonded interfaces.