Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 49: Spinabh
ängiger Transport III
HL 49.2: Vortrag
Freitag, 12. März 2004, 11:15–11:30, H13
Two-dimensional hole precession in an all-semiconductor spin field effect transistor — •Marco G. Pala1,2, Michele Governale1,3, Jürgen König1,4, Ulrich Zülicke1,5, and Giuseppe Iannaccone2 — 1Institut für Theoretische Festkörperphysik, Universität Karlsruhe, Germany — 2Dipartimento di Ingegneria dell’Informazione, Università degli Studi di Pisa, Italy — 3NEST-INFM & Scuola Normale Superiore, Pisa, Italy — 4Institut für Theoretische Physik III, Ruhr-Universität Bochum, Germany — 5Institute of Fundamental Sciences, Massey University, New Zealand
We present a theoretical study of a spin field-effect transistor [1] realized in a quantum well formed in a p–doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an envelope-function approach for the hole bands, we derive the full theory of coherent transport through the device, which includes both heavy- and light-hole subbands, proper modeling of the mode matching at the interfaces, integration over injection angles, Rashba spin precession [2], interference effects due to multiple reflection, and gate-voltage dependence. [1] S. Datta and B. Das, Appl. Phys. Lett. 56, 665, (1990). [2] E. I. Rashba, Fiz. Tverd. Tela (Leningrad) 2, 1224 (1960) [Sov. Phys. Solid State 2, 1109 (1960)].