Regensburg 2004 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 51: Si/Ge

HL 51.2: Vortrag

Freitag, 12. März 2004, 11:45–12:00, H17

Metal-Induced Crystallization of Silicon-Germanium Alloys — •Mario Gjukic, Michael Buschbeck, Robert Lechner, Jens Lübke, and Martin Stutzmann — Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, D-85747 Garching

The fabrication of large-grained polycrystalline silicon and silicon-germanium (poly-SiGe) thin films is increasingly important for large-area electronic devices such as flat panel displays or thin film solar cells. Fundamental for both applications is the use of cheap and transparent substrates, such as glass, requiring low temperature processing steps (T < 500 C). One method which is known to lead to poly-Si layers with good structural and electronic properties is the ALuminum-Induced Layer Exchange (ALILE) process. Here, a bilayer structure of aluminum (Al) and amorphous silicon (a-Si) is deposited on a glass substrate and annealed below the eutectic temperature of the binary Al-Si system (T < 577 C). If the layers are separated by a thin oxide film, for example aluminum oxide or silicon oxide, the annealing process results in a complete layer exchange (Al and Si change positions) and the formation of a coherent poly-Si film. Here, we report the successful realization of poly-SiGe layers over the entire composition range on glass substrates via the ALILE process. We have investigated if the ALILE process is also applicable to binary semiconductors such as SiGe or if significant phase segregation occurs. In addition, optical and electronic properties of the resulting poly-SiGe layers have been studied. The possibility to use the obtained alloy films as seed layers for thin film solar cells will be discussed.

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