Regensburg 2004 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 7: Hauptvortrag Stangl
HL 7.1: Hauptvortrag
Montag, 8. März 2004, 14:30–15:15, H15
Structural properties of semiconductor nanostructures from x-ray scattering — •Julian Stangl1, Anke Hesse1, Vaclav Holy1,2, Rainer T. Lechner1, Tomas Roch1, Mojmir Meduna1, Zhenyang Zhong1, and Günther Bauer1 — 1Instut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, Altenbergerstr. 69, A-4040 Linz, Austria — 2Department of Condensed Matter Physics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37 Brno, Czech Republic
New device concepts and the possibility to realize simple quantum mechanical systems drive the interest in semiconductor nanostructures. In structures smaller than the DeBroglie wavelength of carriers, typically several nm, quantum confinement strongly influences the electronic properties. The latter depend on size, shape, chemical composition and strain distribution, which again vary with growth conditions. In order to understand and control nanostructure growth, their structural properties have to be determined. X-ray diffraction allows for the non-destructive investigation of uncapped and buried structures, which are needed for application.
The talk will present different scattering techniques sensitive to shape, composition and strain of nanostructures. Results will be presented on the shape and positional correlation of SiGe islands in superlattices, and on the composition and strain profile in self-assembled SiGe islands. The effect of capping on has been studied as well.