Regensburg 2004 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 9: Heterostrukturen I
HL 9.5: Vortrag
Montag, 8. März 2004, 16:15–16:30, H17
Distribution of C-acceptors in delta-doped GaAs studied with Cross-sectional Scanning Tunneling Microscopy — •L. Winking1, M. Wenderoth1, T.C.G. Reusch1, R.G. Ulbrich1, P.-J. Wilbrandt2, R. Kirchheim2, S. Malzer3, and G. Döhler3 — 1IV. Phys. Inst., Universität Göttingen, Tammannstr.1, D-37077 Göttingen — 2Inst. f. Materialphysik, Universität Göttingen, Tammannstr.1, D-37077 Göttingen — 3Inst. f. Techn. Physik I, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, D-91058 Erlangen
We present XSTM investigations of the C-acceptor-distribution in delta-doped GaAs. At the intended positions of the C-delta-layers we found at area-densities of 3×1012cm−2 up to extremely high area-densities of 1×1014cm−2 a monolayer-sharp spatial distribution of C-acceptors in growth direction. The slight broadening of less than 0.85nm is found to be almost symmetric around the intended position of the delta-layer up to the highest concentration investigated. These results point out that even at the elevated growth temperature of 570∘C and a very high dopant concentration, which was confirmed by SIMS measurements, neither segregation nor coulombic repulsion plays an important role in the system discussed here.
This work was supported by the DFG, SFB 602 TP A7.