Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Oberflächenphysik

O 11: Elektronische Struktur (Experiment und Theorie) I

O 11.1: Vortrag

Montag, 8. März 2004, 15:45–16:00, H44

Electronic Structure Dependence of the Electron-Phonon Interaction in Ag — •Jens Paggel¹, Dah-An Luh², Tom Miller³, and Tai-Chang Chiang³ — ¹Freie Universität, Institut für Experimentalphysik, 14195 Berlin — ²Stanford Linear Accelerator Center, Menlo Park, CA 94015 (USA) — ³Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA) and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)

The line widths of sp- and d-band derived electronic quantum well states in thin films of Ag on Fe(100) are measured as a function of temperature to yield the electron-phonon coupling parameters. The results vary by a factor of up to 35 among the different states. The origin of these huge differences is traced to the decay path selection for the various initial states of the holes created by the photoemission process. The electron-phonon coupling parameter for the top d-band quantum well state, 0.015 ± 0.006, is the smallest ever reported.

Supported by the US National Science Foundation, the Petroleum Research Fund of the American Chemical Society, the US Department of Energy, and the Deutsche Forschungsgemeinschaft.