Regensburg 2004 – scientific programme
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O: Oberflächenphysik
O 14: Postersitzung (Adsorption an Oberflächen, Epitaxie und Wachstum, Organische Dünnschichten, Oxide und Isolatoren, Phasenübergänge, Rastersondentechniken, Struktur und Dynamik reiner Oberflächen)
O 14.38: Poster
Monday, March 8, 2004, 18:00–21:00, Bereich C
Spot Profile Analysis-LEED and AFM Investigations of Ge/CaF2/Si(111) Multilayers — •Eddy Patrick Rugeramigabo1, Carsten Deiter1, and Joachim Wollschläger2 — 1Institut für Festkörperphysik, Universität Hannover, D-30167 Hannover — 2Institut für Angewandte und Physikalische Chemie, Universität Bremen, D-28359 Bremen
Nanoelectronic devices like resonant tunneling diodes offer very interesting features and quantum effects. Therefore it is necessary to fabricate high quality semiconductor insulator multilayers with few nanometer thick films.
We have investigated the growth and crystallization of thin Ge films (thickness 1-2 nm) deposited on CaF2 at several temperatures between RT and by means of SPA-LEED (Spot Profile Analysis Low Energy Electron Diffraction) and AFM.