Regensburg 2004 – wissenschaftliches Programm
O 24.2: Vortrag
Dienstag, 9. März 2004, 16:00–16:15, H38
Low Electron Energy Microscopy and X-ray Photoemission Electron Microscopy studies of Conducting Atomic-Force Microscopy induced surface modifications on thermally grown SiO2 — •Sascha Kremmer1, Stefan Heun2, Harald Wurmbauer1, Sven Peißl1, and Christian Teichert1 — 1Department of Physics, University of Leoben, A-8700 Leoben — 2Nanospectroscopy Beamline, Synchrotron ELETTRA, I-34012 Trieste
The process of local anodic oxidation, where positive voltages are applied between a conductive AFM tip and a silicon sample is well understood. Here, C-AFM induced surface modification of thermally grown oxides for opposite sample voltage is investigated. To obtain information on the nature of the protrusions observed after C-AFM experiments, LEEM and XPEEM experiments are performed. With LEEM it is found that the protrusions are heavily charged after their formation. This charge within the protrusions is annihilated after the exposure of the sample to short pulses of synchrotron radiation. However, these short x-ray pulses do not change the topography of the protrusions. After prolonged x-ray exposure, a radiation induced desorption of the structures as well as a desorption of the thermal oxide is observed. The spectra obtained from XPEEM images at different kinetic electron energies reveal that the structures formed by C-AFM consist of SiO2.