Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 25: Epitaxie und Wachstum II

O 25.1: Vortrag

Dienstag, 9. März 2004, 15:45–16:00, H39

Influence of cluster mobility and fault energy on stacking-fault formation — •Andreas Lammerschop1, Carsten Busse1,2, Celia Polop1, and Thomas Michely11I. Physikalisches Institut, RWTH Aachen — 2Present Address: Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus C, Denmark

We have applied a mean field rate equation approach to the formation of stacking faults in thin film growth. Here, we discuss the influence of cluster mobility and stacking-fault energy on the probability for the formation of a fault is found. As expected, the fault energy has a strong influence on the formation probability. The higher the fault energy, the lower the probability to find an island in the wrong stacking. Our key finding is, however, the unexpected importance of cluster mobility on the stacking fault probability. For a fixed fault energy, cluster mobility may change the nucleation probability for fault islands by several orders of magnitude; the formation of stacking faults is favored for low cluster mobility. The results of our calculations are discussed in comparison with experimental observations for materials like Platinum, Silver and Copper.

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