Regensburg 2004 – wissenschaftliches Programm
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O: Oberflächenphysik
O 28: Postersitzung (Elektronische Struktur, Grenzfläche fest-flüssig, Halbleiteroberflächen und -grenzflächen, Magnetismus und Symposium SYXM, Methodisches, Nanostrukturen, Oberflächenreaktionen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie)
O 28.77: Poster
Mittwoch, 10. März 2004, 16:00–19:00, Bereich C
Surface Recombination Dynamics of SiO2/Si(100) - A Combined Laser and Synchro Radiation Study — •David Bröcker1, Tatjana Gießel1, and Wolf Widdra2 — 1Max-Born-Institut, Max-Born-Strasse 2a, 12489 Berlin — 2Martin-Lutter-Universtität Halle-Wittenberg, Fachbereich Physik, Fachgruppe Experimentelle Physik III
The charge carrier dynamics at the silicon surface has been studies by probing the surface photovoltage. Upon excitation of electron hole pairs in the surface-near region by picosecond laser pulses, the dynamics of the charge carrier recombination has been determined by time-resolved Si 2p core level photoemission. We compared several sample preparations, the clean Si(100) surface, the hydrogen monohydride, and thin oxide layers. The decay process could be described by a model based on thermionic emission. The influence of the laser fluence and the temperature on the decay process has been studied in detail.