Regensburg 2004 – wissenschaftliches Programm
O 32.7: Vortrag
Donnerstag, 11. März 2004, 12:45–13:00, H38
Nanowires and Nanorings at the Atomic Level — •Bert Voigtländer, Midori Kawamura, Neelima Paul, and Vasily Cherepanov — ISG 3 Forschungszentrum Jülich
The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in scanning tunnelling microscopy (STM) images for Si and Ge, respectively. Also different kinds of two-dimensional Si/Ge nanostructures like alternating Si and Ge nanorings having a width of 5-10 nm were grown.