Regensburg 2004 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Oberflächenphysik

O 34: Oxide und Isolatoren

O 34.1: Vortrag

Donnerstag, 11. März 2004, 11:15–11:30, H45

Investigations of SrO and BaO on the Si(001) surface — •J. Zachariae and H. Pfnür — Institut für Festkörperphysik, Universität Hannover, Appelstr. 2, 30167 Hannover

In an attempt to generate epitaxial medium kr≈30) BaO /SrO films we investigated the growth conditions, crystalline quality and stoichiometry using high resolution LEED, UPS, XPS and EELS. Epitaxial SrO and lattice matched Ba1−xSrxO layers were grown on a Sr/Si(001) interface in UHV by evaporation of the metals in a ambient oxygen pressure. The quality of oxide layers strongly depends on two conditions: The kind of interface e.g. a (5×1)-reconstructed Sr-layer and the accurate oxygen dose, which was determined by mass accumulation on a quartz crystal micro balance. A correct fraction of Ba and Sr in the mixed oxide layers leads to well ordered and lattice matched oxide films from a few monolayers up to 20 nm and more, as seen by the sharper (1×1)-LEED-pattern of the Ba1−xSrxO layers compared to the pattern of the SrO layers. The electronic structure as a function of the interface properties and the layer thickness will be discussed.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2004 > Regensburg