Regensburg 2004 – wissenschaftliches Programm
O 38.6: Vortrag
Donnerstag, 11. März 2004, 17:00–17:15, H38
Metal diffusion on transition metal dichalcogenide surfaces — •R. Kunz und R. Adelung — Chair for Multicomponent Materials, Faculty of Engineering, Christian-Albrechts University, Kaiserstr. 2, 24143 Kiel
The large difference in condensation coefficient is an immanent property of layered crystals like the transition metal dichalcogenide crystals (TMDC) for many different adsorbates. It is well documented that after metal evaporation on such surfaces in UHV, various structures can be formed in a self organized processes. In order to understand why the different structures occur, a systematic study of the growth parameters, (nucleation, diffusion length, evaporated metal, influence of the substrate-crystal), is necessary. We could show that in extreme cases (Cu on metallic TaS2) diffusion length of more than 50 µm could be observed combined with a nucleation probability of almost zero. In contrast, metal diffusion (Cu) on the geometrically similar surfaces on the semiconducting (WSe2) surface show much shorter diffusion length and no diffusion limited aggregation (DLA) growth. We suggest a model to explain the different diffusion behavior as a key to understand the growth of different self organized structures on TMDC-crystals.