Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 39: Epitaxie und Wachstum III

O 39.10: Vortrag

Donnerstag, 11. März 2004, 18:00–18:15, H39

Self-healing of stacking faults in homoepitaxial growth on Ir(111) — •Arne Thoma1, Carsten Busse1,2, and Thomas Michely11I. Physikalisches Institut der RWTH Aachen, 52056 Aachen, Germany — 2Present address: Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus C, Denmark

The growth of a thin film is studied from the nucleation phase to the closure of the first monolayer in the face-centered cubic (fcc) system Ir/Ir(111) using temperature-variable scanning tunneling microscopy. The island that nucleate in the hexagonal close-packed (hcp) stacking cannot coalesce with regular islands. Instead, an assimilation process is observed, where material is transported from the metastable hcp to the energetically favourable fcc sites. The atomic mechanisms governing this transfer are identified. Furthermore, the influence of adsorbates on nucleation of stacking-faults is investigated by exposing the surface to different gases prior to evaporation.

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