Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 39: Epitaxie und Wachstum III

O 39.9: Vortrag

Donnerstag, 11. März 2004, 17:45–18:00, H39

Growth and structure of pulsed laser deposited Pd films on Cu(100) — •Y. Lu, H.L. Meyerheim, W. Wang, J. Barthel, M. Przybylski, and J. Kirschner — MPI für Mikrostrukturphysik, Weinberg 2, 06120 Halle

Pd films in the coverage regime between 0.2 to 8 monolayers (ML, 1ML=1.53×1015atoms/cm2) were grown at room temperature on Cu(001) using pulsed laser deposition (PLD) and studied by scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and Auger-electron spectroscopy (AES). Up to a Pd coverage of θ =4 ML a well defined layer-by-layer growth mode is observed, at higher coverage the strain due to the large mismatch (7.6 %) relaxes by formation of a two-dimensional ordered array of dislocations running parallel to the ⟨ 100 ⟩ directions of the Cu-substrate. In the coverage regime below 4ML, LEED images do not indicate the formation of any ordered superstructure such as the c(2x2), which was previously observed at 0.5 ML for thermally deposited Pd [1]. The two-dimensional misfit dislocation network formed at θ >4ML gives rise to the appearance of diffuse lines of satellite reflections between the (1x1) substrate reflections. For deposition at 500 K, Pd-growth proceeds by the step flow mode and a better ordering of the dislocation network is observed. [1] P.W. Murray et al., PRB 52, R14404 (1995)

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