Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 40: Halbleiteroberflächen und -grenzflächen

O 40.3: Vortrag

Donnerstag, 11. März 2004, 16:15–16:30, H45

Initial and advanced stages of Si dissolution in alkaline media using photoelectron spectroscopy — •Katarzyna Skorupska1, Mohammed Aggour1, Eder Goncalves1, Ralf Hunger2, Helmut Jungblut1, Michael Kanis1, Michael Lublow1, Elmar Rüther1, Thomas Wilhelm1, and Hans-Joachim Lewerenz11Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin — 2TU Darmstadt, Petersenstr. 23, D-64287 Darmstadt

Silicon dissolution in aqueous alkaline media is of ubiquitous importance in micro- and nanostructuring. Never the less detailed surface analytical investigations on the dissolution steps are lacking. The presented study applies synchrotron radiation spectroscopy using a specifically designed in-system electrochemistry vessel attached to the SoLiAS apparatus at the U49/2 beamline at Bessy II. Initial and advanced oxide layers are analysed in electrode potential-, current- and charge-controlled experiments. Besides chemical surface changes also surface electronic effects were monitored using ultraviolet photoelectron spectroscopy. The results are compared with several recently proposed dissolution mechanisms.

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