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Regensburg 2004 – scientific programme

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O: Oberflächenphysik

O 40: Halbleiteroberflächen und -grenzflächen

Thursday, March 11, 2004, 15:45–18:45, H45

15:45 O 40.1 Optische Charakterisierung ultradünner Siliziumoxid-Filme mit der Brewster-Winkel Analyse (BWA) — •Michael Lublow und H. J. Lewerenz
16:00 O 40.2 On the origin of the STM induced Si(001)c(4×2) – p(2×2) phase transition — •Kaori Seino, Wolf G. Schmidt, Frank Groth, and Friedhelm Bechstedt
16:15 O 40.3 Initial and advanced stages of Si dissolution in alkaline media using photoelectron spectroscopy — •Katarzyna Skorupska, Mohammed Aggour, Eder Goncalves, Ralf Hunger, Helmut Jungblut, Michael Kanis, Michael Lublow, Elmar Rüther, Thomas Wilhelm, and Hans-Joachim Lewerenz
16:30 O 40.4 In-Situ- and UHV-Investigation of MOCVD-Grown GaAsSb-Interfaces — •Zadig Kollonitsch, Matthias Neges, Kristof Möller, Frank Willig, and Thomas Hannappel
16:45 O 40.5 Importance of carrier dynamics and conservation of momentum in atom-selective STM imaging of semiconductor surfaces — •Philipp Ebert, Nikos Jäger, Eicke Weber, and Knut Urban
17:00 O 40.6 First-principles calculations for initial adsorption of manganese on Si(001) — •Mahbube Hortaman, Hua Wu, Peter Kratzer, and Matthias Scheffler
17:15 O 40.7 Si addimer nanowires on SiC(001) surfaces — •J. Pollmann and P. Krüger
17:30 O 40.8 Einfluss photoinduzierter Effekte auf die Photoemissionsspektren gesputterter ZnO-Schichten auf Si(111)-H — •Henning Wolf, Ulrich Meier, Tilo Plake und Christian Pettenkofer
17:45 O 40.9 Epitaxial Pr2O3 layers on Si (111) studied with LEED and surface XRD — •Nicole Jeutter, Zarife Özer, and Wolfgang Moritz
18:00 O 40.10 Potential Energy Retention of Slow Highly Charged Ar-Ions in Chemical Clean Silicon Surfaces — •Daniel Kost, Stefan Facsko, and Wolfhard Möller
18:15 O 40.11 Angle-resolved photoelectron spectroscopy of CuInSe2(001) — •Ralf Hunger, Wolfram Jaegermann, Wolfram Calvet, Carstan Lehmann, Christian Pettenkofer, Keiichiro Sakurai, and Shigeru Niki
18:30 O 40.12 Oxide and Carbon contamination removal from semiconductor surfaces using low-energy hydrogen ion beam etching — •Nasser Razek, Axel Schindler, Dietmar Hirsch, and Bernd Rauschenbach
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