Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 46: Grenzfläche fest-flüssig

O 46.4: Vortrag

Freitag, 12. März 2004, 12:00–12:15, H45

Interactions Between Seeds and Silicon Nanorods Grown by Thermal CVD — •Vladislav Spassov, Alan Savan, and Henry Haefke — CSEM Swiss Center for Electronics and Microtechnology, Inc., Rue Jaquet-Droz 1, CH 2000, Neuchatel, Switzerland

Growth of silicon nanorods or whiskers by thermal chemical vapor deposition (CVD) often takes place by the vapor-liquid-solid (VLS) mechanism. A catalytic seed, for example gold, liquefies on the surface of a supporting substrate, decomposing the source material in the gas phase and increasing the epitaxial growth rate of a crystal below it. In the case of gold, the metal cap remains at the top surface, with the pure, crystalline silicon nanorod growing up from below. While silicon is the most widely-used semiconductor material used for the fabrication of electronic devices to date, gold is normally avoided during device processing, because it migrates rapidly into silicon and creates deep levels which can degrade device performance. In this investigation, we use high resolution transmission electron microscopy (HR-TEM) to examine the interface between the seed and the Si nanorod. Further studies look for the presence and placement of catalyst or catalyst-silicon alloy or eutectic mixtures in or along the nanorod.

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