Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 5: Epitaxie und Wachstum I

O 5.5: Vortrag

Montag, 8. März 2004, 12:15–12:30, H44

Growth of Vanadiumoxide and Niobiumoxide on Cu3Au(100) — •Jürgen Middeke, Ralf-Peter Blum, and Horst Niehus — Humboldt-Universität zu Berlin, Institut für Physik, ASP, Newtonstr. 15, 12489 Berlin

Thin crystalline 2-dim vanadiumoxide films can be prepared with controlled stoichiometry by implantation of oxygen into Cu3Au(100) and deposition of vanadium, followed by annealing [1]. The keystep of this procedure is the formation of an amorphous vanadiumoxide layer during the deposition of vanadium that locally has the desired ratio of vanadium to oxygen. With no mass transport necessary, annealing to 700K is sufficient for crystallisation. Depending on the amount of oxygen implanted into the Cu3Au(100)-surface, VO2, V2O3 and VO can be obtained.

As a check if this growth method can be applied also to other transition metal oxides, we exchanged vanadium by niobium. The result is that also flat 2-dim Niobiumoxide films can be prepared. As an example, we get a Nb2O3 structure, a surprising result because Nb2O3 is not known as bulk material. It can be concluded that our growth method is not restricted to the growth of vanadiumoxide.

[1] H. Niehus et al., Phys. Stat. Sol. a 187 (2001) 151

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