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SYOH: Organic and Hybrid Systems for Future Electronics

SYOH 5: Poster

SYOH 5.18: Poster

Donnerstag, 11. März 2004, 18:00–21:00, B

Structure and growth morphology of CuPc thin films — •S. Kowarik¹, A. Gerlach¹, N. Kishimoto^1,2, R. Jacobs¹, and F. Schreiber¹ — ¹Physical and Theoretical Chemistry Laboratory, Oxford University, South Parks Road, Oxford OX1 3QZ, UK — ²Department of Chemistry, Tohoku University, Aoba-ku, Sendai 980-8578, JAPAN

We present a study of the growth and structure of thin films of the organic semiconductor copper-phthalocyanine (CuPc) on SiO₂. Films up to a thickness of 2000 Å have been studied as a function of the growth parameters (temperature and growth rate) by x-ray diffraction, spectroscopic ellipsometry and atomic force microscopy. The films exhibit a change in morphology from smooth films to needle-shaped crystallites depending on growth temperature. This transition is associated with a change from low crystallinity in smooth films to high crystallinity in rough films. Measurements of the geometric film parameters (thickness and roughness) with spectroscopic ellipsometry and x-ray diffraction allow for a comparison of the two techniques. The results are compared to measurements on thin films of the fluorinated version F₁₆CuPc (1, 2).

1. J. O. Osso et al., Advanced Functional Materials 12, 455-460 (2002).

2. M. I. Alonso et al., Journal of Chemical Physics 119, 6335-6340 (2003).