Regensburg 2004 – wissenschaftliches Programm

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SYOH: Organic and Hybrid Systems for Future Electronics

SYOH 5: Poster

SYOH 5.29: Poster

Donnerstag, 11. März 2004, 18:00–21:00, B

Strongly Enhanced Thermal Stability of Organic Semiconductor Thin Films Induced by Aluminum Oxide Capping Layers — •S. Sellner1,2, A. Gerlach3, F. Schreiber3, M. Kelsch1, N. Kasper1, H. Dosch1,2, S. Meyer4, J. Pflaum4, M. Fischer5, and B. Gompf51MPI für Metallforschung, Stuttgart, Germany — 2Institut für Theoretische und Angewandte Physik, Universität Stuttgart, Germany — 3Physical Chemistry Laboratory, Oxford University, UK — 4III. Physikalisches Institut, Universität Stuttgart, Germany — 5I. Physikalisches Institut, Universität Stuttgart, Germany

We show that the thermal stability of thin films of the organic semiconductor diindenoperylene (DIP) can be substantially increased by an aluminium oxide capping layer (50 nm). The DIP films do not only stay on the substrate (oxidized silicon), but even remain crystalline on a time scale of ≥ 1 hour more than 250 K above the desorption temperature for uncapped films. The results of in-situ X-ray diffraction are supported by thermal desorption spectroscopy. We argue that this very effective enhancement of the thermal stability compared to uncapped and also metal-capped organic layers is related to the low mobility of aluminum oxide and the relatively well-defined as-grown interfaces with limited interdiffusion. We discuss possible mechanisms for the eventual breakdown at high temperatures.

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