Regensburg 2004 – wissenschaftliches Programm
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SYOH: Organic and Hybrid Systems for Future Electronics
SYOH 5: Poster
SYOH 5.69: Poster
Donnerstag, 11. März 2004, 18:00–21:00, B
Simulation-Optimization of Ambipolar Organic Field-Effect Transistors — •Gernot Paasch1, Thomas Lindner1, and Susanne Scheinert2 — 1IFW Dresden — 2TU Ilmenau
Ambipolar or double-injection field effect transistors based on amorphous silicon have been investigated almost two decades ago, but they did not find significant application. With organic materials as active layer such devices become of interest due to direct recombination with light emission. Even advanced existing models based on the Pao-Sah description neglect both the actual contact properties and the recombination process. Hence, for analyzing experimental data or optimizing the device performance detailed numerical simulations have been carried out. Comparison with experimental data allows for the determination of important material parameters. Moreover, the simulation reveals the subtle interplay between the properties of the source and gate contacts, interface charges, the ratio of the electron and hole mobilities, doping, and recombination (and the heterojunction in the case of a double layer system). Operation modes are clarified by inspection of the internal concentration and field distributions. Further, the simulations result in rules for possible simple analytical examination of experimental data and for device optimization.