Regensburg 2004 – wissenschaftliches Programm
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SYSN: Quantum Shot Noise in Nanostructures
SYSN 2: Quantum Shot Noise in Nanostructures
SYSN 2.1: Hauptvortrag
Montag, 8. März 2004, 16:00–16:30, H1
Environmental effects in the third moment of voltage fluctuations in a tunnel junction — •Bertrand Reulet1,2, J. Senzier1, and Daniel E. Prober1 — 1Departments of Applied Physics and Physics, Yale University, New Haven CT 06520-8284, USA — 2Laboratoire de Physique des Solides, associé au CNRS, bâtiment 510, Université Paris-Sud 91405 Orsay, France
We present the first measurements of the third moment of the voltage fluctuations in a conductor. This technique can provide a new and complementary information on the electronic transport in any kind of physical system. The measurement was performed on non-superconducting tunnel junctions as a function of voltage bias, for various temperatures and frequency bandwidths up to 1GHz. The data demonstrate the importance of the effect of the electromagnetic environment of the sample on the voltage fluctuations.