Regensburg 2004 – wissenschaftliches Programm
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TT: Tiefe Temperaturen
TT 18: Supraleitung: Tunneln, Josephson-Kontakte, SQUIDs
TT 18.5: Vortrag
Mittwoch, 10. März 2004, 15:30–15:45, H20
STM structure analysis of bismuth high-TC crystals depending on the bias voltage — •Hendrik Glowatzki, Torsten Stemmler, Johannes Zeggel, Alicia Krapf, Christoph Janowitz, and Recardo Manzke — Institut f. Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin
A detailed structural analysis of single and double layered bismuth single crystals (BSCCO) has been performed by Scanning Tunneling Microscopy (STM). Because of the special layered configuration of these superconductors, containing semiconducting, insulating and the superconducting metallic layers, we obtain different atomic images depending on the applied tunneling voltage. In particular, semiconducting layers will be invisible for bias voltages below its gap energy /1/. So it has become possible to observe not only the surface layer but also deeper CuO2-layers which cause high-TC superconductivity. The results can be understood from the particular crystal structure of BSCCO.
[1] Oda, M. et al. Phys. Rev. B 53, 2253 (1995)