Berlin 2005 – wissenschaftliches Programm

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DF: Dielektrische Festkörper

DF 4: Poster

DF 4.10: Poster

Samstag, 5. März 2005, 08:30–16:30, Poster TU C

Effects of the fabrication process and thermal treatment on Pb(Zr_0.3Ti_0.7)O₃ thin films — •Jiang-Li Cao¹, A. Solbach¹, T. Weirich², J. Mayer², U. Böttger³, P.J. Schorn³, P. Gerber³, R. Waser³, and U. Klemradt¹ — ¹II. B Physikalisches Institut, RWTH Aachen — ²Gemeinschaftslabor für Elektronenmikroskopie, RWTH Aachen — ³Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen

The effects of the fabrication process and annealing treatment on the structure of Pb(Zr_0.3Ti_0.7)O₃(PZT) thin films prepared by chemical solution deposition on Pt/Ti oxide electrodes were investigated. By using atomic force microscopy (AFM) and transmission electron microscopy (TEM), the microstructures of the samples were examined. The density, surface and interface roughness as well as the thickness of each layer were determined using x-ray specular reflectivity. The structure of the PZT thin films was found to be influenced by the thermal history to a great extent. The Pt surfaces become roughening after the annealing treatment. A density decrease of the Pt bottom and top electrodes upon annealing was observed. The x-ray reflectivity and TEM observations revealed a sublayer structure of the PZT ceramic induced by the different annealing treatment. Based on the results obtained, the influences of the thermal-induced structure changes on the electrical properties were examined.