Berlin 2005 – wissenschaftliches Programm

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DF: Dielektrische Festkörper

DF 6: Dielektrische und ferroelektrische dünne Schichten und Nanostrukturen II

DF 6.1: Vortrag

Montag, 7. März 2005, 14:00–14:20, TU TC6

Impact of the thermal annealing on Pb(Zr_0.3Ti_0.7)O₃ thin film capacitors — •Jiang-Li Cao¹, A. Solbach¹, T. Weirich², J. Mayer², U. Böttger³, P.J. Schorn³, P. Gerber³, R. Waser³, and U. Klemradt¹ — ¹II. B Physikalisches Institut, RWTH Aachen — ²Gemeinschaftslabor fuer Elektronenmikroskopie, RWTH Aachen — ³Institut fuer Werkstoffe der Elektrotechnik 2, RWTH Aachen

The understanding of the physics of low dimensional ferroelectrics and the related engineering is of crucial importance for the full commercialization of ferroelectric random access memories and is enlightening for other ferroelectric thin film applications. In the present study, the effects of different annealing treatment on the Pt/Pb(Zr_0.3Ti_0.7)O₃(PZT) /Pt/Ti oxide/SiO₂/Si capacitors with PZT prepared by chemical solution deposition were investigated by using atomic force microscopy and x-ray specular and diffuse reflectivity. A density decrease of the Pt bottom and top electrodes upon annealing was observed from fitting the specular reflectivity and further confirmed by diffuse reflectivity. Measurements of the electrical properties of the capacitors revealed a 12 percent reduction of the remanent polarization induced by the thermal treatment. Based on the results obtained, the effects of the thermal annealing on the multilayered structure and in turn the electrical properties of the capacitors will be discussed in correlation with the polarization change.