Berlin 2005 – wissenschaftliches Programm

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DF: Dielektrische Festkörper

DF 6: Dielektrische und ferroelektrische dünne Schichten und Nanostrukturen II

DF 6.6: Vortrag

Montag, 7. März 2005, 15:40–16:00, TU TC6

High Performance PrTiO3-x MIM Capacitors for RF Applications — •Christian Wenger, Roland Sorge, Anil Mane, Thomas Schröder, Gunther Lippert, and Hans-Joachim Müssig — IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder)

Metal-insulator-metal (MIM) capacitors with amorphous PrTiO3-x high-k dielectric films have been investigated. The MIM capacitors with 5 nm PrTiO3-x show very high capacitance densities of 15 fF/mm2. As well as the capacitance density and the voltage coefficient of capacitance (VCC) decreases with increasing dielectric thickness. Optimized MIM capacitors with 20 nm thickness provide high capacitance density and low VCC values within the thermal budget of back end processes.