Berlin 2005 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 1: Dünnschichtanalytik I
DS 1.1: Hauptvortrag
Freitag, 4. März 2005, 10:00–10:45, TU HS107
Not so amorphous silicon dioxide films on silicon — •Wolfgang Donner1, M. Castro-Colin1, S.C. Moss1, Z. Islam2, S.K. Sinha3, R. Nemanich4, H.T. Metzger5, P. Boesecke5, and T. Schuelli5 — 1Department of Physics, University of Houston, 4800 Calhoun, Houston TX 77204-5005, USA — 2Advanced Photon Source, Argonne National Laboratory, Argonne IL 60439, USA — 3Department of Physics, University of California San Diego, CA 92093-0354, USA — 4Department of Physics, North Carolina State University, Raleigh NC 27695, USA — 5European Synchrotron Radiation Facility, 38043 Grenoble, France
Thermally grown oxide films on silicon are still the most widely used gate oxides in integrated circuits. Its extremely smooth interfaces, good dielectric properties and the lack of grain boundaries, along which dopant diffusion would be possible, are unequalled. However, since an amorphous overlayer is being grown onto a well-defined crystalline substrate, it can be expected that the film-substrate interface would exhibit some degree of structural order. Numerous attempts have been made in the past two decades to characterize this technologically very important interface. A review of the structural results will be given, among which the detection of microcrystallites inside an amorphous matrix is now widely accepted. Results from a series of Synchrotron-based x-ray diffraction experiments will be presented that suggest a modulation of the amorphous structure of SiO2 along the Si110 directions induced by the substrate.