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Berlin 2005 – scientific programme

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DS: Dünne Schichten

DS 11: Anorganische dielektrische Schichten

DS 11.1: Talk

Saturday, March 5, 2005, 14:30–14:45, TU HS110

Initial growth of Pr2O3 epitaxial layers on silicon substrates — •Laure Libralesso1, Thomas Schröder2, Tien-Lin Lee1, Isabelle Joumard1, and Jörg Zegenhagen11ESRF, Grenoble, France — 2IHP, Frankfurt(Oder)

In microelectronics industry, the quality of the thermally and electrically stable Si-SiO2 interface has made SiO2 the gate-dielectric material of choice over the last 40 years. However, to follow in time the International Technology Roadmap for Semiconductors, the SiO2 gate must be replaced by an alternative high-K dielectric layer. Among the proposed materials, thin Pr2O3 layers show outstanding dielectric properties. In the present study the Pr2O3/Si(111) system has been investigated as a model system.

The initial stages of Pr2O3 molecular beam epitaxy growth on Si(111) have been studied with in situ low energy electron diffraction and ultra high vacuum scanning tunneling microscopy (STM). Atomically flat Pr2O3 surfaces have been observed for coverages going from submonolayer range up to 2 monolayers. The evolution of the island size, the growth behaviour as well as the nucleation process will be described. Pr2O3 deposits have also been investigated on Si(001) substrates. STM as well as surface X-ray diffraction results will be briefly discussed.

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