Berlin 2005 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 13: Ionenstrahlverfahren II

DS 13.2: Vortrag

Montag, 7. März 2005, 14:30–14:45, TU HS107

Ion induced pattern formation on Ge and Si surfaces — •Bashkim Ziberi, Frank Frost, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstrasse 15, D-04318 Leipzig

Pattern formation during low-energy ion beam erosion can be observed on various semiconductor surfaces and is related to the complex interplay between surface roughening by ion erosion and surface smoothing by different surface relaxation mechanisms. This formation of regular structures with nanometer dimensions (structure dimensions < 100 nm) originated from self-organization processes during ion beam erosion offers a promising tool for large-area nanostructured surfaces. For the technologically most important semiconductor materials Ge and Si the topography evolution during low-energy noble gas ion bombardment was investigated and analyzed by high resolution scanning force microscopy (AFM). Depending on ion beam parameters, i. e. ion energy, ion incidence angle and ion mass, different patterns can evolve on the surface. For example in the case without sample rotation, at small ion incidence angles (5^∘ - 15^∘ with respect to surface normal), very well ordered ripple patterns with wavelength ≈ 50 nm can form in both materials for similar sputtering conditions. However, highly ordered nanostructures on Ge surfaces can be only observed under bombardment with Xe⁺ instead of Ar⁺ ions.