Berlin 2005 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 16: Dünnschichtanalytik III

DS 16.5: Vortrag

Montag, 7. März 2005, 11:45–12:00, TU HS110

Comparison of X-ray reflectometry and fundamental parameter based X-ray fluorescence analysis for the precise investigation of thin films on silicon — •Michael Kolbe, Burkhard Beckhoff, Michael Krumrey, and Gerhard Ulm — Physikalisch-Technische Bundesanstalt, Abbestraße 2-12, 10587 Berlin, Germany

X-ray reflectometry is a reliable method for determining the thickness of nanolayered systems with small uncertainties. In view of known limitations of this method for extremely thin or laterally inhomogeneous layers we compared X-ray reflectometry with fundamental parameter based X-ray fluorescence analysis using synchrotron radiation in the PTB laboratory at BESSY II. The results of both methods for sample systems with transition metal layers of various thicknesses ranging from 5 nm to 50 nm deposited on silicon wafers were compared and showed good agreement within their respective uncertainties. For the investigation of layered systems both methods are very appropriate and, in addition, can give complementary information about the layers. In particular, the layer density can be determined by X-ray reflectometry, whereas X-ray fluorescence analysis provides information about trace elements within the layers and the layer homogeneity.