Berlin 2005 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Dünne Schichten
DS 19: Schichtabscheidung
DS 19.2: Vortrag
Dienstag, 8. März 2005, 14:30–14:45, TU HS107
The preparation of diamond / tungsten carbide composite films by microwave plasma assisted chemical vapour deposition (MWCVD) — •Hisham Abu Samra1, Srikanth Vadali1, Xin Jiang1, and Hans-Joerg Deiseroth2 — 1Lehrstuhl fuer Oberflaechen und Werkstofftechnologie, Institut fuer Werkstofftechnik. Universitaet Siegen. Paul-Bonatz-Strasse 9-11, D-57068 Siegen, Deutschland — 2Institut fuer Anorganische Chemie. Adolf-Reichwein-Straße, 57068 Siegen Deutschland
Diamond / tungsten carbide composite films were prepared by microwave plasma assisted chemical vapour deposition (MWCVD) using a gas mixture of WCl6 - CH4 - H2. The tungsten carbide phase consisted of WC and W2C. The films were deposited on silicon, tungsten and tungsten carbide/cobalt substrates and studied by scanning electron microscopy and grazing-angle X-ray diffraction. The influence of process parameters, such as gas flow rates, substrate temperature and pressure on the volume fractions of tungsten carbide and diamond as well as the surface morphology were investigated. The work shows that it is possible to deposit tungsten carbide and diamond composite in a single process, whereby the volume fractions of WC, W2C and diamond can be varied by controlling the WCl6 / CH4 mole ratio in the gas mixture. Based on these results, a film with a gradient compositional change normal to the substrate surface can be deposited in a single process. Such a tailor-made interlayer can serve as a diffusion barrier as well as improve the adhesion of a diamond film on a non-diamond substrate.