Berlin 2005 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 23: Postersitzung I

DS 23.14: Poster

Freitag, 4. März 2005, 16:00–18:30, Poster TU B

STM-investigation of a nanocluster Cu film on GaAs(110) — •J. Müller, M. Wenderoth, L. Winking und R. G. Ulbrich — IV.Physikalisches Institut, Universität Göttingen, D-37077 Göttingen

The low temperature deposition of Cu on GaAs(110) leads to atomically flat overlayers. This behavior has been explained in terms of the electronic growth model with a critical thickness of 5 monolayers (ML) [1][2]. Here, we report on investigations of Cu films on intrinsic GaAs(110) with coverages below the critical film thickness. At coverages of 1ML we observe nanoclusters with a typical cluster size of  5 nm. Their shape distribution is analyzed and interpreted in terms of a growth anisotropy. Further characterization was done by spatially resolved scanning tunnelling spectroscopy. We found metallic or sometimes semiconducting spectra on the clusters and semiconducting spectra on the bare substrate nearby. Different transport channels of the tunnelling charge carriers are discussed and linked to the STS-spectra. The work was financially supported by the SFB 602 TP A7.

[1] Z. Zhang, Q. Niu, C.-K. Shih, Phys.Rev.Lett. 80, 5381 (1998)

[2] J. Müller, M. Wenderoth, N. Quaas, T. C. G. Reusch, R. G. Ulbrich APL 85, 2220 (2004)