Berlin 2005 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 23: Postersitzung I

DS 23.28: Poster

Freitag, 4. März 2005, 16:00–18:30, Poster TU B

Pulsed reactive sputtering of Indium Tin Oxide using the transition mode of the target — •Matthias Herrmann, Ronny Kleinhempel, Hartmut Kupfer, and Frank Richter — TU Chemnitz, Institut für Physik, 09107 Chemnitz, Germany

In recent years a variety of methods have been applied to prepare ITO films. Hence, the film properties show a strong dependence on the method. We have deposited ITO by pulsed reactive magnetron sputtering from a metallic target (90/10 InSn) in an Ar / O₂ mixture. A plasma emission signal is used to control the working range of the transition mode. This yields the deposition of transparent films in conjunction with a higher deposition rate compared to the oxide target mode. A feedback control loop is necessary for stabilising the setpoint. The ITO films have been prepared by dynamic deposition. It was found that the substrate carrier transport causes changes of the plasma emission signal. The process and plasma parameters were investigated by Langmuir double probes and characterisation of the substrate heating. For both, no significant dependence on the O₂ flow was found. Resistivity, refractive index and optical absorption were characterised by 4-point measurements and spectroscopic ellipsometry, resp.. They showed a strong dependence on the O₂ flow. The lowest resistivity is about 10⁻³ Ω cm.