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DS: Dünne Schichten
DS 23: Postersitzung I
DS 23.34: Poster
Friday, March 4, 2005, 16:00–18:30, Poster TU B
Changes of structure and electrical properties of reactively sputtered WSx-films by increased ion bombardment — •Stefan Seeger1, Rainald Mientus2, and Klaus Ellmer1 — 1HMI-Berlin, Glienicker Str. 100, 14109 Berlin — 2OUT e.V., Köpenicker Str. 325b, 12555 Berlin
Polycrystalline WSx-films with a good crystallographic quality
((00l)-texture) were prepared by reactive magnetron sputtering
with radio frequency at 27.12 MHz from a tungsten target in a
mixture of inert gases (Ar, Xe) and H2S.
Systematic changes of the substrate voltage VS from floating
potential VS= +20 V to an applied negative substrate voltage up
to VS=-100 V increases the positive ion bombardment, namely
Ar+ and Xe+, and leads to a disturbed growth of the WSx
films. In situ energy-dispersive X-ray diffraction (EDXRD)
technique at a synchrotron radiation source was used to study the
growth of the WSx-films.
In this work the influence of the applied substrate voltage, hence
an increased ion bombardment on the growing films, is correlated
to the crystal structure and the electrical and the optical
properties of the sputtered WSx-films.