Berlin 2005 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 24: Postersitzung II

DS 24.17: Poster

Dienstag, 8. März 2005, 17:00–19:00, Poster TU B

Composition and thermal stability of thin functional oxidic (Pr, La, Y) and metallic (Ru, Ti) layers on Si and SiC substrates — •Andriy Styervoyedov, Ioanna Paloumpa, and Dieter Schmeisser — Angewandte Physik - Sensorik, BTU Cottbus, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany

Thin Pr-, La- and Y- based oxide layers for applications as gate dielectric in metal-oxide-semiconductor (MOS) structures are investigated with x-ray photoelectron spectroscopy. The films with a thickness of around 2nm have been prepared on Si and SiC wafers by various chemical deposition methods based on nitrate solutions. In addition, we report on Ti- and Ru- based metal contacts prepared in the same way. The film composition is analysed and annealing steps in vacuum up to 900C have been applied to test their thermal stability. The interface characteristics, surface composition and thermal stability of MOS functional multilayers have been studied and will be presented.

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DPG-Physik > DPG-Verhandlungen > 2005 > Berlin