Berlin 2005 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 8: Ionen-Festkörper-Wechselwirkung I
DS 8.3: Vortrag
Samstag, 5. März 2005, 15:45–16:00, TU HS107
Rapid amorphisation and damage annealing in InGaAs at temperatures between 15 K and 300 K — •Werner Wesch1, Elke Wendler1, and Mark C. Ridgway2 — 1Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Jena — 2Department of Electronic Materials Engineering, Australian National University, Canberra,
The production and stability of irradiation-induced disorder in InGaAs was studied in comparison to the binary extremes InAs and GaAs at 15 and 300 K using in situ irradiation and Rutherford backscattering-channelling (RBS/c). GaAs was easier to amorphise than InAs at 300 K, the opposite was true at 15 K. The temperature dependence or activation energies for the defect migration and annealing that determine residual disorder, presumably associated with the Group III component, must thus be greater in InAs than GaAs. In contrast to the well known behaviour of AlGaAs, the ternary InGaAs alloys did not exhibit amorphisation kinetics intermediate between those of the two binary extremes. At 300 K the critical nuclear energy deposition required to render InGaAs amorphous was less than that of both GaAs and InAs. At 15 K, both InAs and the ternary alloy amorphised at the same value of nuclear energy deposition. The rapid amorphisation of InGaAs is attributed to a greater stability of irradiation-induced defect clusters or amorphous nuclei in the ternary alloy which obviously results from significant differences in In-As and Ga-As bond lengths which are not present for the Al-As and Ga-As bonds in AlGaAs.