Berlin 2005 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DY: Dynamik und Statistische Physik
DY 34: Poster
DY 34.85: Poster
Montag, 7. März 2005, 15:30–18:00, Poster TU D
Simulation of heteroepitaxial growth and misfit dislocations — •Markus Walther1, Michael Biehl1,2, Florian Much1, and Christian Vey1 — 1Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland, D-97074 Würzburg — 2Institute for Mathematics and Computing Science, University of Groningen, P.O. Box 800, NL-9700 AV Groningen
The atomistic simulation of strain effects in heteroepitaxial systems requires the development of off-lattice models which allow for continuous positions of the particles. We present the results of kinetic Monte Carlo simulations of heteroepitaxial growth where the particle interactions are described by simple pair-potentials, e.g. Lennard-Jones or Morse potentials in 1+1 dimensions. The lattice spacing of adsorbate materials differs from that of the substrate, resulting in the appearance of misfit dislocations at a characteristic film thickness. One important aspect is the relaxation of the vertical lattice spacing above the dislocations. Our findings are compared with experimental results on a qualitative level.