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Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 13: III-V Halbleiter II

Friday, March 4, 2005, 15:00–16:30, TU P-N202

15:00 HL 13.1 Electronic structure and band alignment of GaIn(N)As/GaAs quantum wells determined by surface photovoltage and electroreflectance measurements — •M. Hetterich, A. Grau, M. Galluppi, L. Geelhaar, and H. Riechert
15:15 HL 13.2 Unusual Segregation of Antimony into InP in MOVPE — •Martin Leyer, Stefan Weeke, Frank Brunner, Markus Pristovsek, Markus Weyers, and Wolfgang Richter
15:30 HL 13.3 Photoluminescence Measurements on GaAs1−xNx Quantum Wells — •B. Rähmer, F. Poser, M. Pristovsek, and W. Richter
15:45 HL 13.4 Exchange reactions of As and N on GaAs surfaces — •R. Ehlert, S.J. Simon, F. Poser, N. Esser, P. Vogt, and W. Richter
16:00 HL 13.5 Influence of sapphire nitridation of MOVPE growth of InN — •C. Werner, M. Drago, M. Pristovsek, and W. Richter
16:15 HL 13.6 Defect related optical transitions in AlN bulk crystals — •Martin Albrecht, Klaus Irmscher, Matthias Roßberg, Thilo Remmle, Jürgen Wollweber, and Axel Hoffmann
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