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Verhandlungen
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DPG

Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 17: Poster Ib

HL 17.49: Poster

Friday, March 4, 2005, 16:30–19:00, Poster TU F

MOVPE growth of BxGa1−xP alloys on (001) GaP substrates — •Volker Gottschalch1, Gunnar Leibiger1, Jens Bauer1, and Gabi Benndorf21Universität Leipzig, Institut für Anorganische Chemie, Linnéstraße 3, 04103 Leipzig — 2Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig

Only a few data are available on the boron incorporation in AIIIBV compounds. Epitaxial growth of BxGa1−xAs and BxGa1−xyInyAs alloys on GaAs have been studied. We have studied the boron incorporation in GaP because of their optoelectronic properties and the potential application to optoelectronic devices. We report on the metal-organic vapour-phase epitaxy growth of BxGa1−xP alloys on (001) GaP substrates using the precursors triethylboron, trimethylgallium and phosphine. The mole fraction of Boron in the epitaxial layer was varied from x = 0 to 0.03. The growth behaviour of single layers and strained quantum well structures was studied. The influence of the growth conditions on layer deposition, boron incorporation, interface quality, and optical properties of bulk-like and quantum well structures is discussed and compared with the Nitrogen incorporation in GaP.

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