Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 17: Poster Ib
HL 17.5: Poster
Freitag, 4. März 2005, 16:30–19:00, Poster TU F
Influence of the incorporation of group V elements on the electrical properties of ZnO thin films — •Holger von Wenckstern, Susanne Heitsch, Gabriele Benndorf, Daniel Spemann, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig
We have grown ZnO thin films by pulsed laser deposition on sapphire substrates. The samples were doped with N or with P in order to investigate the change in electrical conductivity compared to nominally undoped samples. For that we have used ZnO targets containing different amounts of e.g. P2O5 or e.g. Zn3N2. The electrical properties are related to the content of the group V acceptors. A number of samples is also investigated by photoluminescence measurements and new features in the recombination spectrum are correlated with the incorporation of N or P. The changes of the electrical properties after annealing the thin films at temperatures higher than 700∘C are also reported.