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Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 24: Bauelemente

HL 24.6: Talk

Saturday, March 5, 2005, 12:00–12:15, TU P-N229

MOSFETs with high-k dielectrics Al2O3 and Pr2O3 — •Bernhard Fabel, Michael Oswald, Martin Sterkel, and Walter Hansch — Institute for Technical Electronics, Technical University Munich, Arcisstr. 21, 80333 Munich, Germany

MOS devices were fabricated and characterized for optimisation of high-k materials properties and fabrication conditions and compared to reference MOSFETs with SiO2 gate dielectric. In the reference MOSFETs SiO2 (dOx≈25 nm) as gate dielectric and aluminium metal gate were implemented and characterized. Approving the reproducibility of these devices the SiO2 was replaced by the promising high-k candidates aluminium oxide Al2O3 and praseodymium oxide Pr2O3. Al2O3 was deposited by atomic layer deposition (ALD) at 300C and 1 mbar. Pr2O3 was evaporated in ultra high vacuum in a molecular beam epitaxy (MBE) system at room temperature. Capacitance and conductance measurements were used to extract the following MOS parameters: dielectric constant єr, interface state density Dit, flatband voltage shift Δ VFB. The breakthrough field EBD could be determined by measuring the current density. MOSFETs transfer characteristics lead to the values of threshold voltage shift Δ VTh, channel mobility µ, subthreshold swing S, Ion and Ioff current. Due to the data of the reference devices, it is possible to evaluate the high-k device and material properties by comparing the extracted parameters.

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