Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 57: Poster IIa

HL 57.22: Poster

Tuesday, March 8, 2005, 16:30–19:00, Poster TU E

Modification of Oscillator Strength in Self-Assembled QDs Using a Laterally Applied Electric Field — •Ruth Oulton¹, Matthias Schwab¹, Cedric Bardot¹, Manfred Bayer¹, Viktorina Stavarache², Dirk Reuter², and Andreas Wieck² — ¹Experimentelle Physik II, Universität Dortmund, D-44221 Dortmund, Germany — ²Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, Gebäude NB, D-44780 Bochum, Germany

We report the results of preliminary investigations into a p-i-n structure with an intrinsic region 2µm wide that allows a field of up to 150kVcm⁻1 to be applied in the lateral direction. Time resolved photoluminescence measurements on ensembles embedded in such a structure reveals an increase in the radiative lifetime of the exciton of 30% with increasing electric field. This fact, along with a significant decrease in the intensity with increasing applied field indicate a decrease in oscillator strength, and hence electron-hole overlap as the field is applied. Measurements on a low density of QDs in such structures reveal a weak Stark shift to lower energy as the field is applied, giving further indications of wavefunction modification.