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HL: Halbleiterphysik
HL 7: Transporteigenschaften
HL 7.7: Talk
Friday, March 4, 2005, 12:15–12:30, TU P-N226
High frequency operation of monolithic GaAs/AlGaAs three terminal junctions — •Christian R. Müller, Lukas Worschech, Daniela Spanheimer, and Alfred Forchel — Technische Physik, Universität Würzburg, 97074 Würzburg
Non-linear transport characteristics of monolithic GaAs/AlGaAs three terminal junctions with junction lengths down to a few 10 nm were studied at room temperature and time dependent voltage variations up to 50 GHz. It is found that with increasing bias voltage applied to one branch, voltage sweeps at the other branch lead to a transistor operation with high gain up to d Δ VOut/d Vg ∼ 30 . We relate this novel type of operation to an accumulation of electrons in the junction in the strong non-linear regime, which in turn enhances the capactive coupling of the branches. The interplay of electron injection and gating leads to a pronounced peak in the input characteristics. We have studied the high frequency output of the device. Rectification of the input signal is still observed at frequencies up to 20 GHz.