Berlin 2005 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 7: Transporteigenschaften

HL 7.8: Vortrag

Freitag, 4. März 2005, 12:30–12:45, TU P-N226

Intrinsic feedback controlled bistability in an electron Y-branch switch — •David Hartmann, Lukas Worschech, Stefan Lang, Stephan Reitzenstein, and Alfred Forchel — Technische Physik, Universität Würzburg, 97074 Würzburg

Electron Y-branch switches (YBSs) controlled by four independent side-gates have been realized by electron beam lithography and wet etching in a modulation doped GaAs/AlGaAs heterostructure. Asymmetric gate bias allows the study of field effect in YBSs with only one branch exploited as swept gate controlling the channel between the other branch and the stem. Close to the onset limit of gate-current threshold the YBS shows an intrinsic pronounced switching bistability with no need of any external feedback. The input current-voltage characteristics can be tuned to a reversed and a non-reversed response with gain. We will discuss the role of different gate bias on the switching bistability. Different applications as nanoelectronic Schmitt-Trigger and complementary switching device are proposed and demonstrated.