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MA: Magnetismus

MA 13: Spinabh
ängiger Transport I

MA 13.4: Talk

Saturday, March 5, 2005, 11:30–11:45, TU EMH225

Ballistic Magneto-Current in Magnetic Tunnel Junctions — •Jan Bornemeier, Guenter Reiss, and Hubert Brueckl — University of Bielefeld, Department of Physics, Universitaetstr. 25, 33615 Bielefeld

The combination of a magnetic tunnel junction and a Schottky barrier allows the observation of spin scattering of ballistic electrons at energies around 1eV. For this layer stacks of 4-10nm Co/ 1.8nm Alox/ 4nm Py/ 12nm MnIr/ 50nm Cu/ 50nm Au on (100)-GaAs are deposited and subsequently patterned by e-beam lithography. The injected current is (depending on the base thickness) 4-5 orders of magnitude smaller than the tunnel current. The adjustable current amplitude and the high spin-polarization make these hybride junctions a promising candidate as spin injector into semiconductors. Varying the base thickness, the spin attenuation length of the majority electrons can be estimated to be 50+/-8nm at 10K and 1.2V bias.