Parts | Days | Selection | Search | Downloads | Help

MA: Magnetismus

MA 20: Poster:Schichten(1-29),Spintrsp(30-45),Ex-Bias(46-63),Spindyn(64-75),Mikromat.(76-80),Cluster(81-94),Abbv.(95-99),Obflm(100-02),SpElek.(103-09),E-Theo(110-14),Mikromag.(115-16),Spin+PÜ(117-26),Mag.Mat.(127-51),Meth.(152-55),Mol.Mag(156-59),Kondo(160-65

MA 20.34: Poster

Monday, March 7, 2005, 14:00–18:00, Poster TU C

Fabrication and characterization of magnetic tunnel junctions with ultrathin barriers — •A. Parge, G. Eilers, and M. Münzenberg — IV. Phys. Inst., Universität Göttingen

The fundamental properties of ultrathin barriers in magnetic tunnel junctions (MTJs) have recently become an interesting aspect in the field of spindynamics, since ultrathin barriers can provide extremely high tunnel current densities, which are required for spin current induced switching experiments.

We have prepared AlOx tunnel barriers by means of e-beam evaporation in UHV followed by either plasma or natural oxidation, thus changing the concentration of defects in the barriers. Besides, the barrier thickness and its lateral size (structured by shadow masks or lithography) were varied.

After the optimization of the growth parameters we are planning to characterize the exact transport properties (IV characteristics, TMR at different temperatures). Finally, the MTJs are supposed to be integrated into a strip line with a photoconductive switch in order to study the spin current induced switching effect.